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  1. Abstract

    Polyacrylamide hydrogels are widely used in biomedical applications due to their tunable mechanical properties and charge neutrality. Our recent tribological investigations of polyacrylamide gels have revealed tunable and pH-dependent friction behavior. To determine the origins of this pH-responsiveness, we prepared polyacrylamide hydrogels with two different initiating chemistries: a reduction–oxidation (redox)-initiated system using ammonium persulfate (APS) andN,N,NN-tetramethylethylenediamine (TEMED) and a UV-initiated system with 2-hydroxy-4′-(2-hydroxyethoxy)-2-methylpropiophenone (Irgacure 2959). Hydrogel swelling, mechanical properties, and tribological behavior were investigated in response to solution pH (ranging from ≈ 0.34 to 13.5). For polyacrylamide hydrogels in sliding contact with glass hemispherical probes, friction coefficients decreased fromµ = 0.07 ± 0.02 toµ = 0.002 ± 0.002 (redox-initiated) and fromµ = 0.05 ± 0.03 toµ = 0.003 ± 0.003 (UV-initiated) with increasing solution pH. With hemispherical polytetrafluoroethylene (PTFE) probes, friction coefficients of redox-initiated hydrogels similarly decreased fromµ = 0.06 ± 0.01 toµ = 0.002 ± 0.001 with increasing pH. Raman spectroscopy measurements demonstrated hydrolysis and the conversion of amide groups to carboxylic acid in basic conditions. We therefore propose that the mechanism for pH-responsive friction in polyacrylamide hydrogels may be credited to hydrolysis-driven swelling through the conversion of side chain amide groups into carboxylic groups and/or crosslinker degradation. Our results could assist in the rational design of hydrogel-based tribological pairs for biomedical applications from acidic to alkaline conditions.

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  2. Abstract

    The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide NdxSr1xSnO3(SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 1018 cm−3to 2.0 × 1020 cm−3. Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm2 V−1 s−1, among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm2 V−1 s−1depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics.

     
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